METHOD OF FORMING METAL SILICIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming metal silicide is provided to form a metal silicide without a heat treatment. CONSTITUTION: A method of forming metal silicide comprises the steps of: forming an insulation layer(4) on a substrate(1) on which a semiconductor device is formed and forming a mask to expose a specific region of the semiconductor device by forming a contact hole in the insulation layer; and injecting accelerated metal ionized by applying a high voltage to the substrate(1) into the specific region of the exposed semiconductor device and evaporating a metal layer(2) on the insulation layer(4) and the side wall of the contact hole.