METHOD FOR MANUFACTURING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing contact plug is provided to use selective deposition process in semiconductor device. CONSTITUTION: An isolated inter layer(102) provided in semiconductor substrate is partially etched to form a contact hole(102a). A barrier metal layer(104) is formed onto the isolated inter layer comprising a contact hole. Negative photoresist layer is formed on barrier metal layer as to fill completely contact hole. By further using contact hole forming mask, negative photoresist layer is etched to form photoresist pattern. After photoresist pattern is flowed, barrier metal layer is etched using the reflowed photoresist pattern as mask so as to expose the upper surface of the isolated inter layer on both sides of contact hole. After removing photoresist pattern, a tungsten layer is selectively deposited onto the barrier layer as to fill contact hole, thereby forming a tungsten contact plug(108). Therefore, it enables tungsten to deposit onto desired region, resulting in selectively forming a tungsten contact plug onto desired region without etching process.