FABRICATING METHOD OF MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a magnetoresistive random access memory device is to induce single axis-magnetic anisotropy of a spin valve magnetoresistive material during deposition process without application of outer magnetic field and post-heat treatment. CONSTITUTION: In manufacturing the MRAM(magnetoresistive random access memory) device, a tilt-cut silicon plate is used as a substrate. A Cu layer is formed on the silicon substrate as a base layer. A magnetic material, a non-magnetic material and a magnetic material are successively formed on the Cu base layer so as to induce single axis-magnetic anisotropy . There are many steps on the surface of the tilt-cut silicon substrate, which induces the magnetic anisotropy because of thin film growth on the steps. The magnetic material layer is comprised of NiFe, NiFeCo or Co layer. Though the magnetic material layer and non-magnetic material layer are formed in different thickness, the orientation of magnetic anisotropy is not essentially changed.