METHOD FOR MANUFACTURING GATE ELECTRODE HAVING DUAL GATE DIELECTRIC

摘要

PURPOSE: A method for manufacturing a gate electrode having a dual gate insulating film is provided to prevent contamination of the gate insulating film due to penetration of metal and carbon components, etc. contained in a photoresist film into the gate insulating film by diffusion when the gate insulating film is etched/patterned. CONSTITUTION: A method for manufacturing a gate electrode having a dual gate insulating film prepares a substrate(10) having the first and second portions(11,12). The first insulating film is formed on the first portion(11) of the substrate(10). The first conductive film is formed on the first insulating film. The second insulating film is formed on the first conductive film. The third insulating film is formed on the second portion(12). The second conductive film is formed on the second and third insulating films. The first and second conductive films are patterned to form a gate electrode(120).