| 摘要 |
PURPOSE: A method for compensating step of semiconductor device using metal layer is provided to reduce failure rate by compensating the step and to prevent the interference between signals. CONSTITUTION: A method for compensating step of semiconductor device using metal layer comprises a step of forming a dummy metal layer on lower step portion of a semiconductor device, a step of stacking an IMD(40) on all surface of the resultant, and (c) a step flattening the layer insulation film. The step further comprises a step of forming a dummy metal layer, a step of removing the portion of the dummy metal layer deposited on higher step portion by using a photoresist film pattern as a mask, and a step of removing the photoresist film pattern.
|
