| 摘要 |
PURPOSE: A flash memory circuit is provided to stabilize an operation of a sense amplifier by minimizing an inner resistance of a current loop and a difference of capacitance component. CONSTITUTION: A flash memory circuit comprises a word line/an erase line driver(11), a main memory(12), a Y-decoder(13), a reference controller(15), a bias unit(17), and a sense amplifier(18). The word line/erase line driver receives an outside address and selects the word line or, the erase line. The main memory comprises a dummy cell array and a main cell array. The Y-decoder decodes the outside address and selects a reference line of the dummy cell array, or a bit line of the main cell array. The reference controller selects the word line or the erase line of the reference cell array. The bias unit forms a current loop. The sense amplifier determines whether the selected cell of the main cell array is a programmed cell, or the erased cell.
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