METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor devices are provided to easily control Rs(sheet resistance) in the process of forming polysilicon pattern used as a resistor in a product such as a micro controller unit, etc. CONSTITUTION: A method for manufacturing semiconductor devices forms a field oxide film(21) on the surface of a semiconductor substrate(20) to define a cell region and an active region of a peripheral circuit region. A gate oxide film(22) and a polysilicon layer are formed on the surface of the substrate. The gate oxide film and the polysilicon layer are experienced by PoCl3 process for controlling Rs in the polysilicon layer or injected with ions and are selectively patterned to form the first poly gate pattern layer(23). The second poly gate pattern layer is formed on the peripheral circuit region. An impurity of a low concentration is injected using the first and second poly gate pattern layers as a mask. A nitride layer is formed on the entire surface of the semiconductor substrate including the first and second poly gate pattern layers. An HLD layer is formed on the nitride layer and is then etched back to form a gate sidewall(27), so that the HLD layer can remain only at the side of the first and second poly gate pattern layers. An impurity of a high concentration is injected using the first and second poly gate pattern layers including the gate sidewall as a mask and is experienced by annealing process to form a source/drain region(29) of an LDD structure.