SPUTTERING METHOD WITH IONIZING MATERIAL

摘要

PURPOSE: A sputtering method using ionized thin film forming materials is provided which restrains the damage of the surface of a semiconductor substrate not greatly deteriorating step coverage in the metal wiring process of semiconductor components. CONSTITUTION: The sputtering method using ionized thin film forming materials comprises the steps of loading a semiconductor substrate (100) on the upper part of which an arbitrary film is formed into a sputtering unit; ionizing deposition materials in the sputtering unit; forming a first deposition film (106) by depositing the ionized deposition materials on the semiconductor substrate in the state that AC Bias is not excitated; and forming a second deposition film (108) on the first deposition film (106) by depositing the ionized deposition materials as excitating AC Bias from the deposition unit.