ANALYSING METHOD OF BARE WAFER

摘要

PURPOSE: A method of analyzing a bare wafer for manufacturing semiconductor device is provided to easily analyze defect in the bare wafer manufactured by mono-crystalline growing. CONSTITUTION: In the method of analyzing a bare wafer for manufacturing a number of semiconductor devices manufactured by cutting a silicon rod which is formed by a mono-crystalline growing method, an initial oxygen density measuring process is performed in Fourier Transfer Infrared method; impurities attached to the bare wafer are removed; a defect in the bare wafer is analyzed by measuring COP and D-defect; a thermal oxidation layer is formed on the surface of the bare wafer, and lastly by removing the thermal oxidation layer, the defect in the bare wafer is analyzed. In another method of analyzing bare wafer, after performing, on the bare wafer, the same heat treatment process as in the method of manufacturing semiconductor device, a defect in the bare wafer is analyzed through the life time asuring process. After the life-time process, the thermal oxidation layer is removed and a postal oxygen density measuring process is performed. The defect measuring process is made of OP-measuring process, power-leakage measuring process and oxidation layer-break down measuring process.