| 摘要 |
PURPOSE: A thick film type semiconductor oxygen sensor is provided to present oxide composite to control electrical characteristics by adding La2O3 to pure SrTiO3, of which electricity conductivity is changed in accordance with oxygen concentration to be limited in usage as the oxygen sensor. CONSTITUTION: The oxygen sensor is characterized in that oxide composition represented by a general formula of Sr1-yLayTiO3 is an oxygen sensor which output voltage characteristics according to printed time is changed in stepwise, wherein y is 0.01 to 0.1. The oxygen sensor can have a simple structure without a reference electrode, thereby easily controlling the output voltage in accordance with the voltage and load resistance added to the sensor.
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