HORIZONTAL TYPE DIFFUSION MOS(METAL OXIDE SEMICONDUCTOR) TRANSISTOR WITH PROTECT DIODE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A horizontal type diffusion MOS transistor with protect diode and method for manufacturing thereof are provided to prevent the damage of a gate insulation film due to the concentration of the electric field according to the breakdown voltage within the device. CONSTITUTION: A horizontal type diffusion MOS transistor with protect diode comprises a first conductive type semiconductor substrate(2), a second conductive type embedded layer(4), a first conductive type bottom area(8), a second conductive type epitaxial layer(10) and a first conductive type body area(18). The portion which the embedded layer and the bottom area are contacted to is a protect diode.