METHOD FOR FORMING CONTACT SPACER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming contact spacer of semiconductor device is provided to secure a spacer margin since excellent step coverage is used in etching, thereby preventing the bridge phenomenon between electrodes. CONSTITUTION: A method for forming contact spacer of semiconductor device comprises a step of forming an interlayer dielectrics on a wafer, a step of forming a contact hole by etching process using a mask and then loading the wafer into a deposition device, a step of forming an LTO film under SiO4, O2 and NH3 atmosphere, and a step of forming a spacer on the side wall of the contact hole. The temperature within the deposition device is elevated before forming the LTO film. The spacer is formed by etching process.