| 摘要 |
PURPOSE: A method of fabricating a MOS transistor is provided to be able to easily enhance integrity by forming the MOS transistor within a cylindrical trench structure. CONSTITUTION: Source/drain(2) are formed by implanting impurity ions into a trench and neighboring substrate(1). A gate oxide is deposited on the trench and substrate(1), and a first oxide(6) is deposited on a bottom of the trench. then, the gate oxide is etched, a doped polysilicon is deposited by a predetermined thickness on the first oxide, and a second oxide(8) is deposited on the doped polysilicon. Next, a first mask oxide is deposited on the substrate and the second oxide, patterns are formed, and then the center of the trench is selectively etched. Then, a second mask oxide is deposited on the center of the etched trench, and metal electrodes(11) connected to the source/drain(2) and gate(3) are formed.
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