| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to improve reliability and yield of the device. CONSTITUTION: In the method, the first insulating layer(22) and a photoresist layer are formed on a semiconductor substrate, and then the photoresist layer is selectively patterned to define a node contact hole. Next, by using the patterned photoresist layer as a mask, the first insulating layer(22) is selectively removed to form the first node contact hole(24). Then, the first polysilicon layer(25) and the second insulating layer(26) are sequentially formed over the first insulating layer(22) and selectively patterned together with the first insulating layer(22) to additionally form the second node contact hole(28) in a region where the node contact hole is expected but not formed. The second polysilicon layer(29) is then formed over the second insulating layer(26), and the first and second polysilicon layers(25,29) and the second insulating layer(26) are selectively removed to form a storage node.
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