| 摘要 |
PURPOSE: A DRAM and a fabrication method thereof are provided to improve reliability, yield and the degree of integration by forming a capacitor on the transistor vertically. CONSTITUTION: The DRAM includes a plurality of thin film transistors formed on a semiconductor substrate(31), each transistor having the first and second impurity regions(33,39). The first insulating layer(41) is formed over entire surfaces and has the first contact holes each exposing the first impurity region(33) between the transistors. A plurality of bit lines(42) are formed in the first contact holes and electrically connected to the first impurity regions(33). The second insulating layer(43) is formed over the first insulating layer(41) and has the second contact holes each exposing the second impurity region(39). A plurality of capacitors, each having a storage node electrode(44), a dielectric layer(45) and a plate electrode(46), are formed in the second contact holes and over the second insulating layer(43), and electrically connected to the second impurity regions(39).
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