METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to improve the ON-OFF characteristic of the device by controlling a threshold voltage. CONSTITUTION: A method for manufacturing semiconductor devices forms an initial oxide film on a semiconductor substrate. A nitride film is formed on the oxide film. A photoresist is formed on the nitride film and is then patterned by a photolithography process to form a mask pattern layer for forming a device isolation layer. The exposed nitride film is selectively removed using the patterned photoresist as a mask and a field ion implantation process is then performed for the exposed field region in order to increase a device isolation characteristic. The photoresist is used as the mask in the nitride film patterning process and the field ion implantation process. A field oxidization process is formed using the nitride film as a mask to form a field oxide film in the device isolation region. The nitride film used as the mask in the field oxidization process is removed and impurities are injected into an active region defined by the field oxide film in order to control the threshold voltage of the device.