| 摘要 |
PURPOSE: A method for fabrication of a standard wafer used in thickness measurement is provided to enhance the precise in measuring by fabricating the standard wafer in considering of the growth period of a natural oxide, and to be able to measure the accurate thickness of the wafer using a transmissive electron microscope together with a nondestructive method. CONSTITUTION: An oxide or nitride(11) is grown on a substrate(10). Then, a natural oxide(12) is grown on the oxide or nitride and then the thickness of the resultant is measured using a thickness measuring device. Next, polysilicon(13) is deposited on the natural oxide and the thickness of the resultant is measured using a transmissive electron microscope. Then, simultaneous equations are obtained by using a transforming method between the measurement values of the thickness measuring device and transmissive electron microscope. Finally, a real thickness is measured a nondestructive method using the simultaneous equations.
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