| 摘要 |
PURPOSE: A method for forming a trench isolation layer of a semiconductor device is provided to prevent the formation of grooves in upper peripheral edges of the trench isolation layer during the removal of a trench etch mask. CONSTITUTION: In the method, the trench etch mask(104) including an organic material layer(103) is formed on a semiconductor substrate(10) having an active region and an isolation region. Next, a trench(106) is formed in the substrate(100) through the mask(104) exposing the isolation region, and filled with an insulating layer(108a). The insulating layer(108a) is then planarized until a top surface of the mask(104) is exposed. Thereafter, the insulating layer(108a) is selectively etched so that a top surface of the insulating layer(108a) may become coplanar with a top surface of the substrate(100) in the active region. After that, the mask(104) is selectively removed. To remove the mask(104), the organic material layer(103) is turned into an inorganic layer by supplying oxygen and then wet-etched, or the organic material layer(103) is vaporized by baking.
|
