| 摘要 |
PURPOSE: A fabricating method of a capacitor is provided to simplify the process of removing oxides within storage nodes and a cylinder, and to increase the density of an HSG(Hemispherical grain) layer. CONSTITUTION: First, a first oxide(22), a tantalum oxide(23) and a first conductive layer are sequentially formed on a semiconductor substrate(21). Then, second oxide patterns having constant intervals are formed on the first conductive layer. Next, second conducting sidewalls(27a) are formed on both sides of the second oxide patterns. Then, first conductive layer patterns are formed by selectively removing the first conductive layer using the second oxide patterns as masks, and then the second oxide patterns are removed. Next, HSG layers(28) are formed on sidewalls of the first/second conductive layers. Finally, a dielectric(29) and a third conductive layer(30) are formed on all surface of the substrate including the HSG layer.
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