Radiation emitting semiconductor body, especially an LED chip, has an electrically conductive radiation output layer of indium-gallium-aluminum phosphide

摘要

A radiation emitting semiconductor body, having an electrically conductive radiation output layer (5) of indium-gallium-aluminum phosphide, is new. A radiation emitting semiconductor body has an InGaAlP active layer (3) followed, in the main emission direction (8), by an electrically conductive radiation output layer (5) of InxGa1-x-yAlyP, where x = greater than 0 to 0.10 and y = 0 to 0.10 exclusive. An Independent claim is also included for production of the above semiconductor body, in which the process temperature is altered continuously or in steps during growth of the radiation output layer.