| 摘要 |
A semiconductor laser with improved device characteristics and novel protection against high power output degradation is disclosed. The laser comprises a plurality of layers deposited on a substrate, including an active layer with neighboring cladding layers, so as to define a waveguide, said waveguide having opposing end surfaces. A single crystal mirror layer is formed directly on at least one of the end surfaces, providing improved device characteristics and a longer life time for high power output applications. The mirror layer has sufficient thickness and is made of a material having a refractive index sufficiently different from that of the active layer to substantially modify the reflectivity of the first end surface. In a preferred embodiment, the laser is an A1GaAs laser designed to operate at 980nm, and the single crystal mirror layer comprises a large band gap material, such as ZnSe, MgS, or BeTe. |
