METHOD FOR PRODUCING SEMICONDUCTOR LAYERS

摘要

The aim of the invention is to produce semiconductor layers by epitaxial growth using reactive gases on a substrate. To this end, said substrate is placed on a susceptor which can be heated and against which the reactive gases flow in a reactor vessel. Excess deposits are cleaned from the susceptor between the individual deposition processes of the layers in order to improve layer homogeneity. This is carried out by heating the susceptor to high temperatures in an inert or chemically aggressive atmosphere or by wet-chemical cleansing.