发明名称 |
Siliziumscheibe mit auf einer Oberfläche gestapelten polykristallinen Siliziumschichten,und ihr Herstellungsverfahren |
摘要 |
A silicon wafer has a polycrystalline silicon film formed on one main surface. The polycrystalline silicon film has a multilayer structure composed of X layers (X is an integer equal to or greater than two) containing <220> oriented components in different proportions. The proportion of the <220> oriented component in the first polycrystalline silicon layer in contact with the silicon wafer is larger than the respective proportions of the <220> oriented components in the second to X-th polycrystalline silicon layers superposed on the first polycrystalline silicon layer. It becomes possible to provide a silicon wafer whose polycrystalline silicon film possesses high gettering capability and in which stress acting on the silicon wafer is decreased. <IMAGE> |
申请公布号 |
DE69700554(T2) |
申请公布日期 |
2000.04.13 |
申请号 |
DE1997600554T |
申请日期 |
1997.03.26 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KOBAYASHI, NORIHIRO;KOARAI, KATSUNORI |
分类号 |
H01L21/322;H01L21/304;H01L29/04;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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