发明名称 Elektronenstrahllithographie mit verringerter Aufladung
摘要 A workpiece is patterned in accordance with the lateral pattern of a spatially selective, electrically charged, scanning beam of actinic radiation by:- (1) directing the beam at a major surface of a conductive layer (13) that is located overlying a resist layer (11) that is sensitive to the beam, the conductive layer being transparent to the beam, the resist layer being located overlying the workpiece; (2) removing the entire thickness of the conductive layer by means of dry etching; (3) developing the resist layer, whereby the resist layer becomes a patterned resist layer in accordance with the pattern of the beam.
申请公布号 DE69326224(T2) 申请公布日期 2000.04.13
申请号 DE1993626224T 申请日期 1993.12.06
申请人 AT & T CORP., NEW YORK 发明人 DEMARCO, JOHN JOSEPH;PIERRAT, CHRISTOPHE
分类号 H01L21/027;G03F1/26;G03F7/20;G03F7/38;H01L21/475 主分类号 H01L21/027
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