Large diameter, high temperature stable, single crystal semiconductor substrate wafer, for IC production, has an anti-stress layer outside the active region to counteract gravity-induced forces

摘要

A large diameter, high temperature stable, single crystal semiconductor substrate wafer (1) has an anti-stress layer (3) outside the active region to counteract gravity-induced forces. A single crystal semiconductor substrate wafer, of /- 200 mm diameter, has one or more single crystal and/or amorphous anti-stress layers (3) which counteract mechanical forces acting on the bulk material during a high temperature process during device production, layer(s) arranged outside the active regions and dimensioned according to gravity-induced compressive, bending and friction forces resulting from the bulk material and the horizontal lay-out scheme in batch or single wafer processing. An Independent claim is also included for production of the above wafer. Preferred Features: The anti-stress layer is a buried silicon-germanium layer or a back face silicon nitride layer.