发明名称 |
Semiconductor light emitting device and method for producing the same |
摘要 |
A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a &lang&1, 1, -2, 0&rang& direction. <IMAGE> |
申请公布号 |
EP0986151(A3) |
申请公布日期 |
2000.04.12 |
申请号 |
EP19990117438 |
申请日期 |
1999.09.08 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
NAKAMURA, SHINJI;ISHIDA, MASAHIRO;YURI, MASAAKI;IMAFUJI, OSAMU;ORITA, KENJI |
分类号 |
H01L33/00;H01S5/223;H01S5/323 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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