发明名称 Semiconductor light emitting device and method for producing the same
摘要 A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a &lang&1, 1, -2, 0&rang& direction. <IMAGE>
申请公布号 EP0986151(A3) 申请公布日期 2000.04.12
申请号 EP19990117438 申请日期 1999.09.08
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 NAKAMURA, SHINJI;ISHIDA, MASAHIRO;YURI, MASAAKI;IMAFUJI, OSAMU;ORITA, KENJI
分类号 H01L33/00;H01S5/223;H01S5/323 主分类号 H01L33/00
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