Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors

摘要

Disclosed are aluminum nitride sintered bodies having blackish hues, i.e. low lightness, useful in semiconductor production. Such an aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. Alternatively the aluminum nitride sintered body is characterized by its ESR spectrum or its laser Raman spectrum. One method of producing the aluminum nitride sintered body is by sintering a raw material composed of powdery aluminum nitride having a carbon content of 500 - 5000 ppm at a temperature of not less than 1730 DEG C to not more than 1920 DEG C under a pressure of not less than 80 kg/cm<2>.