| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor non-volatile memory storage, having excellent surface efficiency, on which electric write-in operation can be performed only once, and to provide the write-in method of its program. SOLUTION: On a semiconductor non-volatile memory storage, the first element region 3a is formed in the region of the first well 2a provided on a semiconductor substrate 1 of a semiconductor non-volatile memory storage 15, and the second element region 3b is formed in the region of the second well 2b in such a manner that they are separated by a field oxide film 4. A memory transistor 16, to be used to write-in a program, is provided on the above-mentioned first element region 3a, an address transistor 17, which controls the write-in operation, is provided on the second element region 3b, and the source region 11b of the address transistor 17 and the drain region 10a of the memory transistor 16 are connected by a metal wiring 9c.</p> |
