发明名称 Self-biasing, non-magnetic, giant magnetoresistance sensor
摘要 A self-biasing, non-magnetic giant magnetoresistive sensor having a Corbino-disk geometry constructed from a thin film of e.g., doped, Mercury Cadmium Telluride (MCT) Hg1-xCdxTe exhibiting anomalously large Giant Magnetresistance (GMR) and zero field offset. In one embodiment, the sensor has a silicon substrate, a layer of doped, inhomogeneous MCT, and electrodes attached to the inhomogeneous layer. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate. In another embodiment, the sensor has a silicon substrate, a layer of doped, homogeneous MCT, and electrodes attached to the doped homogeneous MCT. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate as well. With constructed in as either of these embodiments, highly doped Corbino devices may show a significant zero-field offset in the GMR which results in a built-in bias field as high as 1500 G at T=300 K.
申请公布号 US6048632(A) 申请公布日期 2000.04.11
申请号 US19970917058 申请日期 1997.08.22
申请人 NEC RESEARCH INSTITUTE;NEC CORPORATION 发明人 SOLIN, STUART A.;THIO, TINEKE;KAWANO, MASAYA
分类号 G01R33/09;G11B5/33;G11B5/39;H01F10/193;H01L43/08;(IPC1-7):G11B5/66 主分类号 G01R33/09
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