摘要 |
A self-biasing, non-magnetic giant magnetoresistive sensor having a Corbino-disk geometry constructed from a thin film of e.g., doped, Mercury Cadmium Telluride (MCT) Hg1-xCdxTe exhibiting anomalously large Giant Magnetresistance (GMR) and zero field offset. In one embodiment, the sensor has a silicon substrate, a layer of doped, inhomogeneous MCT, and electrodes attached to the inhomogeneous layer. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate. In another embodiment, the sensor has a silicon substrate, a layer of doped, homogeneous MCT, and electrodes attached to the doped homogeneous MCT. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate as well. With constructed in as either of these embodiments, highly doped Corbino devices may show a significant zero-field offset in the GMR which results in a built-in bias field as high as 1500 G at T=300 K.
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