发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which can cut a wafer in accurate alignment with the position of a cutting line which is to provide a cutting margin as the cutting length on the wafer in the dicing process of the semiconductor device, which has the bump on the surface and wherein the gap of the bump is sealed with resin. SOLUTION: On a semiconductor wafer 10, wherein the circuit pattern of a semiconductor chip is formed in the first region and a cutting line 16 between the semiconductor chips is formed along the first region and the second region, a bump is formed so as to be connected to the circuit pattern of the semiconductor chip. A resin film 15 is formed on the bump-forming surface of a semiconductor wafer at the following film thicknesses: in the first region, the specified film thickness sealing the gap part of the bumps; and in a region 16a including at least a part of the cutting line of the second region, the film thickness, which can confirm the position of a part of the cutting line. The cutting line, which is confirmed at the region including a part of the cutting line in the second region is made to be the reference position. The semiconductor wafer is cut along the cutting line.
申请公布号 JP2000106382(A) 申请公布日期 2000.04.11
申请号 JP19980274094 申请日期 1998.09.28
申请人 SONY CORP 发明人 SAITO TAKASHI
分类号 H01L25/00;H01L21/301;H01L21/56;H01L21/60;H01L23/31 主分类号 H01L25/00
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