| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor layer, which is capable of depositing a good semiconductor layer having a large area, at a high speed. SOLUTION: In the method for producing a semiconductor layer, which is comprised of introducing a source gas into a discharge chamber 101, then supplying a high frequency electric power to decompose the source gas by discharge and forming the semiconductor layer on a substrate 107 in the discharge chamber, the high frequency electric power having at least VHF frequency is supplied and a bias electric power comprising a direct current electric power and/or high frequency electric power having RF frequency is supplied together with the high frequency electric power having VHF frequency into the discharge chamber 101 while adjusting the direct current component of the electric current to an electrode 106, to which the bias electric power is supplied, to be 0.1-10 A/m2 expressed in terms of the current density that the direct current component is divided by the area of the inner wall of the discharge chamber. |
