发明名称 BUMP FORMING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To form the bump, which recures the excellent connecting state, at the terminal part of the specified object such as a semiconductor chip. SOLUTION: In the method for forming a bump 30, which has a continuity with a terminal part 10 in an object 1, wherein a terminal part 10 is formed, an insulating laser 2 is formed on a terminal-part forming-surface side 1a in the object 1. At the same time, a through hole 20 is formed in this insulating layer 2, and a terminal part 10 is exposed from this through hole. A conducting layer 4 is formed by electroless plating at the upper surface of the terminal part 10 and the inner surface of the through hole 20. A conductor particle 3 is mounted in correspondence with the through hole 20. The conductor particle 3 is fused, and the inside of the through hole 20 is filled with the conductor component. These processes are included. Desirably, the object is the wafer, wherein a semiconductor chip 1 and a plurality of circuit elements constituting the semiconductor chip are built as a unitary body, the insulating substrate, wherein the semiconductor chip is mounted and the semiconductor device is constituted, or the circuit board, wherein the electronic parts are mounted.</p>
申请公布号 JP2000106379(A) 申请公布日期 2000.04.11
申请号 JP19980273258 申请日期 1998.09.28
申请人 ROHM CO LTD 发明人 SHIBATA KAZUTAKA
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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