| 摘要 |
PROBLEM TO BE SOLVED: To obtain the highly-efficient and high-gain high-frequency amplifier, which decreases grounding inductance and can improve the characteristics by the large extent. SOLUTION: A grounding bump is formed on the electrode of the HBT of a semiconductor chip and at the edge side from the center of the semiconductor chip. The grounding bump of the semiconductor chip is bonded to a first grounding electrode 11D, which is formed on the surface of a circuit board 10 by flipchip bonding. Grounding via-holes 12 are formed on the circuit board 10 with the specified interval being provided for a bonding position 13 on the outside of the bonding position 13, where the bonding bump is bonded to the center of the above described semiconductor chip. By the above-described grounding via-holes 12, the first grounding electrode 11D of the surface of the circuit board 10 and the second grounding electrode at the back surface of the circuit board 10 are connected.
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