发明名称 |
Semiconductor memory device and method for reading and writing data therein |
摘要 |
An NAND gate for outputting an output establishment detection signal in response to the fact that a complementary output of a latch type sense amplifier has been established is provided. When a tristate buffer is activated by signal, a word line which has been in a selected state is rendered non-selected state. Accordingly, current can be prevented from leaking from a power supply line to a ground line in tristate buffer. In addition, column current Ic flowing through memory cells can be minimized in response to the fact that word line has been set to a selected state.
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申请公布号 |
USRE36655(E) |
申请公布日期 |
2000.04.11 |
申请号 |
US19970917220 |
申请日期 |
1997.08.25 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOZARU, KUNIHIKO;OHBA, ATSUSHI |
分类号 |
G11C11/417;G11C7/10;G11C11/407;G11C11/409;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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