发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To ensure high light receiving efficiency by forming the surface of a multiplayer film comprising a second conductivity type single crystal silicon layer, a single crystal silicon lay and a single crystal silicon.germanium layer of a plurality of faces of different orientation. SOLUTION: A plurality of faces having orientation different from that of a substrate 1 is formed on the surface of a second conductivity type single crystal silicon layer, i.e., a p-type single crystal silicon layer 3. Only in the opening of an insulation film 4 formed on the p-type single crystal silicon layer 3, a multiplayer film, i.e., an Si/Si1-xGex superlattice layer 7 serving as a light receiving part, is formed by laminating the single crystal silicon layer and a single crystal silicon.germanium lay a plurality of times alternately. Surface of the superlattice layer 7 is formed of a plurality of faces of different orientation. Since a plurality of faces of different orientation are formed selectively, an optical input signal is reflected on the faces and the light receiving efficiency can be enhanced even if the light receiving part is formed thin.
申请公布号 JP2000106453(A) 申请公布日期 2000.04.11
申请号 JP19980274545 申请日期 1998.09.29
申请人 HITACHI LTD 发明人 ODA KATSUYA
分类号 H01L31/10;(IPC1-7):H01L31/10 主分类号 H01L31/10
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