| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of manufacturing an insulated-gate field-effect semiconductor device, which forms a gate insulating film without making a non-single crystal semiconductor layer formed on a substrate contact the atmosphere to manufacture the device, which is good in switching characteristics and can be used in a high frequency range. SOLUTION: This insulated-gate field-effect semiconductor device is manufactured by a method wherein a non-single crystal semiconductor layer 2 is formed on an insulating surface on a substrate 1 and thereafter, this layer 2 is held so as not to come in touch with the atmosphere to form a gate insulating film 3 consisting of a silicon nitride film on the layer 2, a gate electrode 4 is formed on the film 3 and impurities are doped to the layer 2.
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