| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for manufacturing a laminated SOI board without generating a crack in a single crystal semiconductor thin film and peeling of the semiconductor thin film. SOLUTION: Porous silicon layers 103 are selectively formed in a single crystal silicon substrate 101. After that, hydrogen ions are added to the surface layer within the substrate 101 to form a hydrogen at layer 105 in the surface of the substrate 101, and the substrate 101 bonded with a support substrate 107. After the laminated SOI board is divided into two by thermal annealing, the stabilization of the laminated interface between the substrates 101 and 107 is contrived by second thermal annealing. After that, porous silicon layers 110 are selectively removed to obtain insular simple crystal silicon layers 112.
|
