发明名称 |
Semiconductor device having a metal containing layer overlying a gate dielectric |
摘要 |
A method of forming a semiconductor device includes providing a substrate (10) and depositing a gate dielectric (12) overlying the substrate (10). A gate is formed overlying the gate dielectric (12). The gate has a first sidewall and comprises a metal-containing layer (14) overlying the gate dielectric (12). A first spacer layer (20) is deposited over the gate and the substrate (10). A portion of the first spacer layer along the first sidewall forms a first spacer (22). A liner layer (30) is deposited over the gate and the substrate (10), and a second spacer layer (32) is deposited over the liner layer (30). The second spacer layer (32) is etched to leave a portion of the second spacer layer (32) along the first sidewall to form a second spacer (34). Also disclosed is a metal gate structure of a semiconductor device.
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申请公布号 |
US6049114(A) |
申请公布日期 |
2000.04.11 |
申请号 |
US19980118877 |
申请日期 |
1998.07.20 |
申请人 |
MOTOROLA, INC. |
发明人 |
MAITI, BIKAS;CANDELARIA, JON;CHEN, JIAN |
分类号 |
H01L21/265;H01L21/336;H01L21/8238;H01L29/10;H01L29/49;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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