| 摘要 |
PROBLEM TO BE SOLVED: To attain high sensitivity while maintaining a high rate of a residual film and to form a good pattern with high resolving power by developing a specified positive type photoresist composition with a specified developer. SOLUTION: A positive type photoresist composition containing 3-15 pts.wt. sensitizer containing a quinonediazido group based on 100 pts.wt. alkali-soluble novolak resin is developed with an aqueous organic or inorganic alkali solution having a lower concentration than the conventional solution as a developer. This developer is, e.g. an aqueous solution of a quaternary ammonium hydroxide of the formula [(R1)3N-R2]+OH- (where R1 is 1-3C alkyl or 1-3C hydroxy substituted alkyl) having <=2.2 wt.% concentration. The quaternary ammonium compound is, e.g. tetramethylammonium hydroxide or tetraethylammonium hydroxide. |
