发明名称 METHOD AND DEVICE FOR PROCESSING OBJECT
摘要 PROBLEM TO BE SOLVED: To suppress particles from being generated in a reaction tube and to manufacture a high-quality semiconductor device at high yield. SOLUTION: A sub-bypass pipe 65 equipped with a sub-valve SSV is formed parallel to a slow-exhaust bypass pipe 64 of an evacuation system of a thermal process apparatus. While the sub-valve SSV is opened to evacuation through the sub-bypass pipe 65, a wafer boat 14 is loaded or unloaded from a reaction pipe 11, and sticking of sublimation gas which is a reaction by-product and particles to a semiconductor substrate 15 are prevented.
申请公布号 JP2000106347(A) 申请公布日期 2000.04.11
申请号 JP19980274020 申请日期 1998.09.28
申请人 TOKYO ELECTRON LTD 发明人 MATSUURA HIROYUKI;KATO HISASHI
分类号 H01L21/205;C23C14/56;C23C16/34;C23C16/44;H01L21/31;(IPC1-7):H01L21/205 主分类号 H01L21/205
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