发明名称 FERROELECTRIC THIN FILM AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To provide a single crystal ferroelectric thin film having a stably controlled composition and fine and good surfacing and crystallizing characteristics. SOLUTION: This thin film contains an Li element and at least one element of Nb and Ta. It is manufactured by the steps of adding a water in an amount, such that the mole ratio of composite metal alkoxide to water is 1:1 to 1:2, to organic solvent of composite metal alkoxide with organic ligands shown in the formula: R1OR2O-(where R1 is an aliphatic hydrocarbon group and R2 is a bivalent aliphatic hydrocarbon group which may have an ether linkage) for partial hydrolysis, of applying a precursor solution obtained in the hydrolysis onto a single crystal substrate, and of giving heat treatment thereto.</p>
申请公布号 JP2000106036(A) 申请公布日期 2000.04.11
申请号 JP19980273651 申请日期 1998.09.28
申请人 FUJI XEROX CO LTD 发明人 TAKEDA TOMO;MORIYAMA HIROAKI;NASHIMOTO KEIICHI
分类号 C30B29/30;G02B6/12;G02B6/13;G02F1/03;H01B3/00;(IPC1-7):H01B3/00 主分类号 C30B29/30
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