发明名称 |
Method of manufacturing flash memory |
摘要 |
A method for manufacturing a flash memory. A substrate having a patterned pad oxide layer formed thereon and a patterned mask layer on the pad oxide layer is provided. A doped region is formed in the substrate exposed by the patterned mask layer and the pad oxide layer. A spacer is formed on the sidewall of the patterned mask layer and the pad oxide layer to cover a portion of the doped region. A trench is formed in the substrate exposed by the mask layer and the spacer. An insulating layer is formed to fill the trench, wherein the insulating layer leveled with a top surface of the patterned mask layer. The patterned mask layer and the spacer are removed to respectively expose the patterned oxide layer and the portion of the doped region. A self-aligned tunnel oxide layer is formed on the portion of the doped region. A patterned first conductive layer is formed over the substrate to expose portions of the patterned pad oxide layer above the substrate excluding the doped region. A self-aligned doped region is formed in the substrate under the patterned pad oxide layer exposed by the patterned first conductive layer. A dielectric layer is formed on the patterned first conductive layer and the self-aligned doped region. A patterned second conductive layer is formed over the substrate.
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申请公布号 |
US6048768(A) |
申请公布日期 |
2000.04.11 |
申请号 |
US19990267760 |
申请日期 |
1999.03.11 |
申请人 |
UNITED SEMICONDUCTOR COPR. |
发明人 |
DING, YEN-LIN;HONG, GARY |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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