| 摘要 |
PROBLEM TO BE SOLVED: To perform the etching under the state that an aspect ratio is lower when a through hole is opened and to perform processing readily. SOLUTION: After a plasma oxide film 9 is deposited, a through hole 11 having the specified shape is provided. A low permittivity film 12, which has the larger selecting ratio of etching for the plasma oxide film 9, is deposited on the entire surface. Then, a wiring groove 15 is formed in the low permittivity film 12. A barrier metal 16 and a conducting layer 17 are embedded in the through hole 11 and the wiring groove 15 in the entire surface. The surface is flattened by a CMP method, and the wiring is formed.
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