发明名称 |
Benign method for etching silicon dioxide |
摘要 |
Traditionally, hydrofluoric acid (HF) or buffered bydrofluoric acid (NH4F) is mixed with water to form a etching solution for cleaning silicon dioxide from semiconductor wafer surfaces. An etching solution formed by mixing ammonium hydrogen bifluoride ((NH4)HF2) with water provides a benign alternative for cleaning silicon dioxide.
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申请公布号 |
US6048406(A) |
申请公布日期 |
2000.04.11 |
申请号 |
US19980057358 |
申请日期 |
1998.04.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MISRA, ASHUTOSH;PRASAD, JAGDISH;SEES, JENNIFER A.;HALL, LINDSEY H. |
分类号 |
H01L21/306;H01L21/311;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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