Method and system for testing the reliability of gate dielectric films

摘要

A method for estimating the longevity of a gate dielectric film of a semiconductor device. A plurality of test bias voltages are applied to a plurality of test semiconductor devices. The test gate currents drawn in the respective dielectric films of the test semiconductor devices in response to the test bias voltages are measured. A relationship is determined between the test gate currents and the longevity of the test semiconductor devices. A production semiconductor device is biased with a predetermined bias voltage. The gate current drawn through the gate dielectric film of the semiconductor device in response to the predetermined bias voltage is measured. The longevity of the gate dielectric film of the production semiconductor device is estimated based on the measured gate current, using the determined relationship.