| 摘要 |
PROBLEM TO BE SOLVED: To form a resist pattern excellent in adhesion to substrates, and dry etching resistance and excellent also in sensitivity and developability by adjusting the types of contents of functional-group-containing norbornene derivatives among the repeating units constituting the main chain. SOLUTION: 100 pts.wt. at least one copolymer represented by the formula is mixed with 0.3-10 pts.wt. at least one acid generator and a suitable amount of a solvent to obtain a chemically modified resist composition. In the formula, X is formula II, formula III, or formula IV; R1 is acetyl, t-butyloxycarbonyl, cyclohexylcarbonyl, adamantanecarbonyl, bicyclo[2,2,1]heptanemethylcarbonyl, or the like; R2, R3, and R4 are each a 1-10C alkyl such as methyl, ethyl, t-butyl, i-propyl, bicyclo[2,2,1]heptanemethyl, or the like, or a cyclic/polycyclic alkyl; l+m+n+o=1; o is 0.4-0.6; and l, m, and n are each 0.5 or below. |
