| 摘要 |
PROBLEM TO BE SOLVED: To improve surface flatness and crystallinity by a method wherein a first semiconductor layer is formed on a substrate, and a second semiconductor layer is formed on the first semiconductor layer, and a plurality of fine holes are formed in the first semiconductor layer, and constituting the second semiconductor layer by a group III nitride compound semiconductor. SOLUTION: A semiconductor layer 12 is formed on a substrate 11, and is provided with a plurality of fine holes 14 of which a mean diameter is 3 to 10 nm. And, on such the semiconductor layer 1 are laminated semiconductor layers 13 as an epitaxial layer using a group III nitride compound semiconductor expressed by a general formula GaxAlyInzN (wherein 0<=x<=1, 0<=y<=1, 0<=z<=1, x+y+z=1). Thus, since it is possible to relax lattice mismatch between the substrate 11 and the group III nitride compound semiconductor, it is possible to attain a compound semiconductor layer containing substrate 10 excellent in crystallinity and surface flatness. |
