| 摘要 |
PROBLEM TO BE SOLVED: To decrease the entire sheet resistance of a first body part by forming a second conductivity type heavily doped layer at the first body part while spacing apart from the source-drain region such that the impurity concentration of the heavily doped layer can satisfy specified conditions. SOLUTION: A second conductivity type heavily doped layer 30 is formed at a first body part 16 being spaced apart from the source-drain region 18. Assuming a normal L passing through the center of a gate electrode 14 intersects the interface between a gate insulation film 13 and a semiconductor layer 12 at coordinates (O, O, O), the normal L intersects the interface between the semiconductor layer 12 and an insulation film 13 at coordinates (O, O, T), and the impurity concentration in a heavily doped layer 30 is highest at coordinates (O, O, M), a relationship 0.5T<M<=1.2T is satisfied. The center of the gate electrode 14 means a point for dividing the width W thereof equally into two.
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