| 摘要 |
PROBLEM TO BE SOLVED: To realize an SiC vertical FET, which brings out fully the material characteristics of an SiC and can be stably operated. SOLUTION: A semiconductor device is constituted into a structure, wherein the device has a first conductivity type low-resistance silicon carbide substrate 1, a first conductivity type high-resistance drift layer 2, which is formed on the substrate 1 by an epitaxial growth method and consists of a silicon carbide layer, second conductivity type base regions 7 formed in each one part of the surface layer of the layer 2, first conductivity type source regions 8 formed within the regions 7, a gate insulating film 10 formed selectively on one part of the surface of the layer 2, a surface protective film and a gate electrode 9 formed on the film 10, the film 10 consists of at least a two-layer insulating film formed in the order of a first insulating film 3 and a second insulating film 4, the dielectric constant of the film 3 is set higher than that of a silicon oxide film and a band gap in the film 4 is set longer than that in the film 3.
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