| 摘要 |
A circuit built-in light-receiving element includes a buried diffusion layer of the second conductivity type, a buried diffusion layer of the first conductivity type, an epitaxial layer of the second conductivity type, a diffusion layer of the first conductivity type, and a signal processing circuit element. The buried diffusion layer of the second conductivity type is formed in a first region on a substrate of the first conductivity type. The buried diffusion layer of the first conductivity type is selectively formed in the buried diffusion layer of the second conductivity type. The epitaxial layer of the second conductivity type is formed on the buried diffusion layer of the first conductivity type. The buried diffusion layer of the first conductivity type and the epitaxial layer of the second conductivity type constitute a light-receiving element. The diffusion layer of the first conductivity type reaches the buried diffusion layer of the first conductivity type through the epitaxial layer of the second conductivity type. The signal processing circuit element is formed in a second region on the substrate of the first conductivity type.
|
